2SA1963 transistor equivalent, pnp epitaxial planar silicon transistor.
* Low noise : NF=1.5dB typ (f=1GHz).
* High gain : | S2le |2=9dB typ (f=1GHz).
* High cutoff frequency : fT=5GHz typ.
Package Dimensions
unit:mm 2018B
[2SA19.
Features
* Low noise : NF=1.5dB typ (f=1GHz).
* High gain : | S2le |2=9dB typ (f=1GHz).
* High cutoff frequ.
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